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1 m e m o r y all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301 - www.maxwell.com 20 megabit (512k x 40-bit) eeprom mcm 79c2040 ?2005 maxwell technologies all rights reserved. 04.20.05rev 1 f eatures : 512k x 40-bit eeprom mcm ?r ad -p ak ? radiation-hardened against natural space radiation total dose hardness: - >100 krad (si) - dependent upon orbit excellent single event effects - sel th > 120 mev/mg/cm 2 - seu > 90 mev/mg/cm 2 read mode - seu = 18 mev/mg/cm 2 write mode high endurance - 10,000 cycles/byte (page programming mode) - 10 year data retention page write mode: 128 dword page high speed: - 150 and 200 ns maximum access times automatic programming - 10 ms automatic page/dword write low power dissipation - 375 mw/mhz active current -3. 2 mw standby current d escription : maxwell technologies? 79c2040 multi-chip module (mcm) memory features a greater than 100 krad (si) total dose toler- ance, dependent upon orbit. using maxwell technologies? pat- ented radiation-hardened r ad -p ak ? mcm packaging technology, the 79c2040 is the first radiation-hardened 20 megabit mcm eeprom for space application. the 79c2040 uses twenty 1 megabit high speed cmos die to yield a 20 megabit product. the 79c2040 is capable of in-system electri- cal byte and page programmability. it has a 128 word page programming function to make the erase and write operations faster. it also features data polling and a ready/busy signal to indicate the completion of erase and programming operations. in the 79c2040, hardware data protection is provided with the res pin, in addition to noise protection on the we signal and write inhibit on power on and off. software data protection is implemented using the jedec optional standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose tolerance. this product is available with screening up to maxwell technologies self-defined class k logic diagram
m e m o r y 2 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 pinout description 1, 11, 21, 30, 40, 50, 51, 61, 71, 80, 90, 100 vss - ground 2, 12, 22, 29, 39, 49, 52, 62, 72, 79, 89, 99 vcc - positive supply 60 - 53, 41 - 48, 10 - 3, 91 - 98, 88 - 81 d0 to d39 data i/o 13, 14, 15, 16 cs0\ - cs3\ chip enable 23 - 28, 31, 32, 78 -73, 70 - 68 a0 to a16 address inputs 33 res\ - reset 34 - 38 we\0 - we\4 write enables 66 - 63 rbsy\0 - rbsy\3 ready/busy 67 oe\ - output enable
m e m o r y 3 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 t able 1. 79c2040 a bsolute m aximum r atings p arameter s ymbol m in t yp m ax u nit supply voltage v cc -0.6 7.0 v input voltage v in -0.5 1 1. v in min = -3.0v for pulse width < 50ns. 7.0 v package weight rsf 35 grams operating temperature range t opr -55 125 c storage temperature range t stg -65 150 c t able 2. 79c2040 r ecommended dc o perating c onditions p arameter s ymbol m in m ax u nit supply voltage v cc 4.5 5.5 v input voltage res _pin v il v ih v h -0.3 1 2.2 v cc -0.5 1. v il min = -1.0v for pulse width < 50 ns 0.8 v cc +0.3 v cc +1 v v v operating temperature range t opr -55 125 c t able 3. 79c2040 d elta l imits 1 1. parameters are measured and recorded per mil-std-883 for class k devices p arameter v ariation 2 2. specified value in table 5 i cc1a +/- 10 % i cc1d +/- 10 % i cc2a +/- 10 % i li - addr , ce , oe , we +/- 10 % i li - d0-d39 +/- 10 %
m e m o r y 4 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 t able 4. 79c2040 c apacitance (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nit input capacitance : v in = 0v 1 c in oe 6pf c in we 6 c in ce 0-30 30 c in a0-a16 6 c in res 120 output capacitance: v out = 0v 1 c out rdy/bsy 60 pf c o ut d0-d39 -- 48 1. guaranteed by design. t able 5. 79c2040 dc e lectrical c haracteristics (v cc = 5v 10%, t a = -55 to +125c) p arameter t est c ondition s ymbol s ubgroups m in m ax u nits input leakage current a0-a16, we , oe v cc =5.5v, v in = v cc & v in =0v i li 1, 2, 3 1 1 a input leakage current ce v cc =5.5v, v in =0v & v in =0v 10 a input leakage current d0-d39 v cc =5.5v, v in =v cc & v in =0v 8 a output leakagecurrent 1 (v cc = 5.5v, v out = 5.5v/0.4v) i lo 1, 2, 3 -- 8 a standby v cc current ce = addr=we =oe =v cc i cc1a 1, 2, 3 -- 640 a ce =v ih , addr=we =oe =0v i cc1d -- 21 ma operating v cc current 1,2 oe = 0v addr=we =v cc i out = 0ma, ce duty = 100%, cycle = 1 us at v cc = 5.5v i cc2a 1, 2, 3 75 ma oe =addr=we =0v i out = 0ma, ce duty = 100%, cycle = 150 ns at v cc = 5.5v i cc2d 1, 2, 3 250 ma input voltage res _pin v il v ih v h 1, 2, 3 2.2 v cc -0.5 0.8 v output voltage 3 data lines: v cc min, i ol = 2.1ma data lines: v cc min, i oh = -400 a all outputs: v cc min , i oh = -100ua v ol v oh 1, 2, 3 -- 2.4 v cc - 0.3v 0.4 -- -- v v v 1. for res i il = 2000ua 2. only one ce active(logic low) 3. rbsy is an open drain output. only v ol applies to this pin.
m e m o r y 5 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 t able 6. 79c2040 ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in m ax u nit address access time ce = oe = v il , we = v ih -150 -200 t acc 9, 10, 11 -- -- 150 200 ns chip enable access time oe = v il , we = v ih -150 -200 t ce 9, 10, 11 -- -- 150 200 ns output enable access time ce = v il , we = v ih -150 -200 t oe 9, 10, 11 0 0 75 100 ns output hold to address change ce = oe =v il , we = v ih -150 -200 t oh 9, 10, 11 0 0 -- -- ns output disable to high-z 2 ce = v il , we = v ih -150 -200 ce = oe = v il , we = v ih -150 -200 t df t dfr 9, 10, 11 0 0 0 0 50 60 350 450 ns ns res to output delay ce = oe = v il , we = v ih 3 -150 -200 t rr 9, 10, 11 0 0 450 650 ns 1. test conditions: input pulse levels = 0.4v to 2.4v; input rise and fall times < 20 ns; output load = 1 ttl gate + 100 pf (including scope and fixture); reference levels for measuring timing = 0.8 v/1.8 v. 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. guaranteed by design. t able 7. 79c2040 ac e lectrical c haracteristics for w rite o peration (v cc = 5v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nits address setup time -150 -200 t as 9, 10, 11 0 0 -- -- ns chip enable to write setup time (we controlled) -150 -200 t cs 9, 10, 11 0 0 -- -- ns
m e m o r y 6 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 write pulse width ce controlled -150 -200 we controlled -150 -200 t cw t wp 9, 10, 11 250 350 250 350 -- -- -- -- ns ns address hold time -150 -200 t ah 9, 10, 11 150 200 -- -- ns data setup time -150 -200 t ds 9, 10, 11 100 150 -- -- ns data hold time -150 -200 t dh 9, 10, 11 10 10 -- -- ns chip enable hold time (we controlled) -150 -200 t ch 9, 10, 11 0 0 -- -- ns write enable to write setup time (ce controlled) -150 -200 t ws 9, 10, 11 0 0 -- -- ns write enable hold time (ce controlled) -150 -200 t wh 9, 10, 11 0 0 -- -- ns output enable to write setup time -150 -200 t oes 9, 10, 11 0 0 -- -- ns output enable hold time -150 -200 t oeh 9, 10, 11 0 0 -- -- ns write cycle time 2 -150 -200 t wc 9, 10, 11 -- -- 10 10 ms data latch time -150 -200 t dl 9, 10, 11 300 400 -- -- ns byte load window -150 -200 t bl 9, 10, 11 100 200 -- -- s byte load cycle -150 -200 t blc 9, 10, 11 .55 .95 30 30 s t able 7. 79c2040 ac e lectrical c haracteristics for w rite o peration (v cc = 5v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nits
m e m o r y 7 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 time to device busy -150 -200 t db 9, 10, 11 120 170 -- -- ns write start time 3 -150 -200 t dw 9, 10, 11 150 250 -- -- ns res to write setup time 4 -150 -200 t rp 9, 10, 11 100 200 -- -- s v cc to res setup time 4 -150 -200 t res 9, 10, 11 1 3 -- -- s 1. use this device in a longer cycle than this value. 2. t wc must be longer than this value unless polling techniques or rdy/busy are used. this device automatically completes the internal write operation within this value. 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. guaranteed by design. t able 8. 79c2040 m ode s election 1 p arameter ce 2 oe we i/o res rdy/busy read v il v il v ih d out v h high-z standby v ih x x high-z x high-z write v il v ih v il d in v h high-z --> v ol deselect v il v ih v ih high-z v h high-z write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out 3 v h v ol program reset x x x high-z v l high-z 1. refer to the recommended dc operating conditions. 2. for ce 0-3 only one ce can be used (active) at a time. 3. bits 7, 15, 23, 31 and 39 t able 7. 79c2040 ac e lectrical c haracteristics for w rite o peration (v cc = 5v 10%, t a = -55 to +125c) p arameter s ymbol s ubgroups m in 1 m ax u nits
m e m o r y 8 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 f igure 1. r ead t iming w aveform f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 9 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled ) f igure 4. p age w rite t iming w aveform (1) (we c ontrolled ) 1) a7-a16 are page addresses and must be the same within a page write operation.
m e m o r y 10 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform 1 1) a7-a16 are page addresses and must be the same within a page write operation. i/o 1 1) i/o 7, 15, 23, 31 aand 39
m e m o r y 11 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 f igure 7. s oftware d ata p rotection t iming w aveform (1) ( in protection mode ) f igure 8. s oftware d ata p rotection w aveform (2) ( in non - protection mode ) eeprom a pplication n otes this application note describes the programming procedures for the eeprom modules and with details of various techniques to preserve data integrity. automatic page write page-mode write feature allows 1 to 128 bytes of data to be written into the eeprom in a single write cycle. loading the first byte of data, the data load window opens 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s of the preceding falling edge of either we or ce . when ce and we are kept high for 100 s after data input, the eeprom enters the write mode automatically and the data input is written into the eeprom. we , ce pin operation during a write cycle, addresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce .
m e m o r y 12 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 data polling data polling function allows the status of the eeprom to be determined. if eeprom is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from i/o 7 to indicate that the eeprom is per- forming a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal goes low (v ol) after the first write signal. at the end of the write cycle, the rdy/busy returns to a high state. res signal when res is low (v l ), the eeprom cannot be read or programmed. the eeprom data must be protected by keeping res low when v cc is power on and off. res should be high (v h ) during read and programming operations. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation. during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mistake. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. be careful not to allow noise of a width more than 20ns on the control pins . 20ns
m e m o r y 13 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 2. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by external circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. 3. res signal res should be kept at v ss level when v cc is turned on or off. the eeprom breaks off programming operation when res become low, programming operation doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data is input . 4. software data protection enable the 79c2040 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. this is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. software data protection is enabled by writing the following data sequence to the eeprom and allowing the write cycle period (t wc ) of 10ms to elapse: . software data protection enable sequence 10ms address 5555 aaaa or 2aaa 5555 data aa aa aa aa aa 55 55 55 55 55 a0 a0 a0 a0 a0
m e m o r y 14 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 5. writing to the memory with software data protection enabled to write to the device once software protection is enabled, the enable sequence must precede the data to be written. this sequence allows the write to occur while at the same time keeping the software protection enabled sequence for writing data with software protection enabled . 6. disabling software protection software data protection mode can be disabled by inputting the following 6 bytes sequence. once the software protection sequence has been written, no data can be written to the memory until the write cycle (t wc ) has elapsed. software protection disable sequence devices are shipped in the ?unprotected? state, meaning that the contents of the memory can be changed as required by the user. after the software data protection is enabled, the device enters the protect mode where no further write commands have any effect on the memory contents. address 5555 aaaa or 2aaa 5555 data aa aa aa aa aa 55 55 55 55 55 a0 a0 a0 a0 a0 write address(s) normal data input address 5555 aaaa or 2aaa 5555 data aaaa or 2aaa 55 55 55 55 55 20 20 20 20 20 5555 aa aa aa aa aa 80 80 80 80 80 55 55 55 55 55 aa aa aa aa aa 5555
m e m o r y 15 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 note: all dimensions in inches 100 p in s tacked f lat p ackage s ymbol d imension m in n om m ax a .400 .448 .500 b .006 .008 .010 c .006 .008 .010 d 1.346 1.366 1.388 e .882 .897 .912 e1 -- -- .950 e2 .702 .708 -- e3 1.825 1.900 -- e 0.025bsc l .330 .340 .350 q .013 .018 .023 s1 .005 .075 -- n 100
m e m o r y 16 04.20.05 rev 1 all data sheets are subject to change without notice ?2005 maxwell technologies all rights reserved 20 megabit (512 x 40-bit) eeprom mcm 79c2040 important notice: these data sheets are created using the chip manufacturers published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the use of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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